Recently, the research team of King Abdullah University of Science and Technology (KAUST) developed a nano-scale aluminum gallium nitride (AlGaN) light-emitting device.
The researchers used a graded-index distribution structure (GRINSCH) device to create nanoscale GRINSCH diodes, and researchers hope to apply them to nano-high-performance UV LED devices such as lasers, light sensors, and amplitude modulators. On the integrated optical related device.
Source: KAUST official website
Existing AlGaN light-emitting devices are considered to be UV light sources that replace existing UV gas lasers and UV lamps containing toxic substances. However, due to the UV laser diode in the device, the voltage must be at least 25 volts to operate, and the efficiency of the hole injection layer is poor, resulting in high series resistance, resulting in limited performance. The reason for this is related to the P-type semiconductor coating of the AlGaN aluminum layer and the lack of an effective heat dissipation pipe.
Compared with the original AlGaN epitaxial film layer, nano-sized AlGaN can form an effective stress relaxation due to a high surface area to volume ratio, and can be directly extended on a substrate including a metal. Metal and metal substrates covered with tantalum or sapphire provide better heat dissipation piping during high current operation.
In addition, since the nano-sized P-type semiconductor has a low activation energy requirement due to the addition of magnesium, the electric resistance is relatively small. The research team confirmed that the GRINSCH diode is excellent in electronic and optical performance, and the required voltage and series resistance are lower than the original diode.
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