Thin-film Technology Now Comes to Infrared Emitter Diodes


October 12, 2004... Top performance up to 700 mW/sr

Osram Opto Semiconductors is now using thin-film technology not only for LEDs, for which it is now a well established technology, but also for infrared components. Because of the exceptional efficiency with which light is emitted from a thin-film chip, it is Possible to produce an 850 nm infrared emitter diode (IRED) that even in its first generation and for a normal chip size achieves an overall output of 50 mW for a forward current of 100 mA.

Thin 。 。 。 。 。 At Electronica, Osram will be presenting the prototype of a chip enlarged by about nine times that produces an output in dc operation in excess of 400 mW at 1 A. In radial components the light Can also be tightly focused through a lens, leading to extremely high radiant intensities. For small angles (about 3 cancer values ​​up to 700 mW/sr are possible, even with the small chip.

The wavelength of the new IREDs from Osram Opto Semiconductors is 850 nm and therefore closer to visible light (400 to 780 nm) than that of conventional IREDs which emit light with a wavelength of 880 nm. They are sometimes partial suitable for modern CMOS and CCD The 850 nm IRED is ideal for illuminating scenes that cannot be seen by the human eye but which can be recorded with these cameras They can be used the automobile sector, for example, for night vision systems which increase road safety at night. This invisible light is also used for safety and security-related monitoring purposes.

These include invisible illumination of car interiors for the presence and position-related control of airbags, video-aided monitoring of car parks and the measurement of traffic volume and speed. IREDs are available in various packages, but mainly in SMT packages.


Shireen Padmanathan
Sales & Marketing (Asia Pacific)
Regional Marketing Communications & Public Relations Manager
OSRAM Opto Semiconductors (Malaysia) Sdn. Bhd.
Tel : +604 643 4404
Fax : +604 643 4063
Mailto:shireen.
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