LED chip price declines, LED chip factory continues to improve process and technology to reduce costs, semiconductor equipment factory GT ADVANCED TECHNOLOGIES develops HVPE system to replace nGaN and uGaN growth process in MOCVD, future LED chip The plant can accelerate epitaxial growth by increasing the HVPE system. Compared with the MOCVD expansion capacity, the HVPE system amplification capacity is expected to save up to 25% of the capital expenditure of the LED chip factory.
GT has announced in May 2013 that it uses the patented HVPE technology exclusively owned by Soitec Phoenix Labs (a subsidiary of Soitec). The HVPE technology is characterized by fast growth rate, rapid growth of nGaN and uGaN at a low cost, and precursors for HVPE. The body (GaCl3) is also 10 times cheaper than the precursor TMG required for MOCVD. In addition, the output speed of HVPE system in nGaN and uGaN is faster than MOCVD. Therefore, the LED chip factory can expand in the future by adding HVPE system. Capacity.
The GT example shows that the capacity of an HVPE is equivalent to two MOCVDs. That is, for an LED chip factory that already has 12 MOCVDs, if the manufacturer wants to double the production capacity, it has been to purchase 12 more MOCVD methods. Achieving the goal, but now can purchase 6 HVPE systems without adding MOCVD machines, replace the growth process of nGaN and uGaN with HVPE system, and let the MOCVD machine focus on the growth of other layers to achieve capacity expansion. The goal, as a result, the cost of equipment purchases at LED wafer fabs is expected to be significantly reduced.
GT pointed out that HVPE systems can achieve large-scale, low-cost production of sapphire-based GaN. It is estimated that HVPE systems can reduce the cost of precursors by more than 80%, while increasing the output of expensive MOCVD processes, which can reduce the capital expenditure of LED wafer fabs by up to 25%. The HVPE system is expected to be available in the second half of 2014.
GT has announced in May 2013 that it uses the patented HVPE technology exclusively owned by Soitec Phoenix Labs (a subsidiary of Soitec). The HVPE technology is characterized by fast growth rate, rapid growth of nGaN and uGaN at a low cost, and precursors for HVPE. The body (GaCl3) is also 10 times cheaper than the precursor TMG required for MOCVD. In addition, the output speed of HVPE system in nGaN and uGaN is faster than MOCVD. Therefore, the LED chip factory can expand in the future by adding HVPE system. Capacity.
The GT example shows that the capacity of an HVPE is equivalent to two MOCVDs. That is, for an LED chip factory that already has 12 MOCVDs, if the manufacturer wants to double the production capacity, it has been to purchase 12 more MOCVD methods. Achieving the goal, but now can purchase 6 HVPE systems without adding MOCVD machines, replace the growth process of nGaN and uGaN with HVPE system, and let the MOCVD machine focus on the growth of other layers to achieve capacity expansion. The goal, as a result, the cost of equipment purchases at LED wafer fabs is expected to be significantly reduced.
GT pointed out that HVPE systems can achieve large-scale, low-cost production of sapphire-based GaN. It is estimated that HVPE systems can reduce the cost of precursors by more than 80%, while increasing the output of expensive MOCVD processes, which can reduce the capital expenditure of LED wafer fabs by up to 25%. The HVPE system is expected to be available in the second half of 2014.
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