Ganzhao Optoelectronics has recently obtained the invention patent certificate issued by the State Intellectual Property Office of the People's Republic of China and the trademark registration certificate issued by the Trademark Office of the State Administration for Industry and Commerce of the People's Republic of China. The specific conditions are as follows:
Title of Invention: Buried high-brightness LED structure
Patent No.: ZL 2010 1 0140070.9
Patent Type: Invention Patent
Patent filing date: March 30, 2010
Authorization announcement date: June 12, 2013
The invention discloses a buried high-brightness light-emitting diode structure, which uses an MOCVD, MBE or other device to produce an epitaxial layer on a substrate, and the epitaxial layer can be transferred to another substrate by bonding or some means, and the other side of the light-emitting layer is used as the first An electrode is protected by a mask, and a buried region is formed by dry etching or wet etching. The etching depth is over the active layer, and a passivation film is deposited as a spacer layer in the buried region of the vacuum sputtering device, above or near the isolation layer. A second electrode is plated. The invention improves the injection efficiency and luminous efficiency of the current.
According to Ganzhao Optoelectronics, the invention has strong innovation and leading edge in buried high-brightness LEDs. This patent will have a positive impact on the company's core technology.
Title of Invention: Buried high-brightness LED structure
Patent No.: ZL 2010 1 0140070.9
Patent Type: Invention Patent
Patent filing date: March 30, 2010
Authorization announcement date: June 12, 2013
The invention discloses a buried high-brightness light-emitting diode structure, which uses an MOCVD, MBE or other device to produce an epitaxial layer on a substrate, and the epitaxial layer can be transferred to another substrate by bonding or some means, and the other side of the light-emitting layer is used as the first An electrode is protected by a mask, and a buried region is formed by dry etching or wet etching. The etching depth is over the active layer, and a passivation film is deposited as a spacer layer in the buried region of the vacuum sputtering device, above or near the isolation layer. A second electrode is plated. The invention improves the injection efficiency and luminous efficiency of the current.
According to Ganzhao Optoelectronics, the invention has strong innovation and leading edge in buried high-brightness LEDs. This patent will have a positive impact on the company's core technology.
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